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Electronics (3.13) (Optional module)›Discrete semiconductor devices (3.13.1)

Discrete semiconductor devices (3.13.1)

Understand MOSFETs, zener diodes, photodiodes, and sensors, including their characteristic curves, switching action, and applications.
14 min

Discrete components are single semiconductor devices, such as transistors or diodes. They are used when you only need a simple function or to handle high power. For example, a single transistor might be used in a motor driver to switch current to a lamp.

Integrated circuits (ICs) combine billions of devices on one silicon chip, making them ideal for complex tasks. For example, a desktop computer processor uses over transistors inside one IC to run programs.

An integrated circuit can contain billions of tiny transistors and capacitors, but these are designed for complex, low-power tasks. When higher power or larger currents are needed, discrete components are used instead.

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A semiconductor is a material whose ability to conduct electricity lies between a conductor and an insulator.

  • In a conductor (like copper), electrons move freely with almost no extra energy.
  • In an insulator (such as glass), electrons are tightly bound and require a very large amount of energy to move.
  • A semiconductor (like silicon) sits in between: electrons need only a small boost of energy from heat, light, or voltage to move and carry current.

Semiconductors conduct using two types of charge carriers:

  • Electrons: can be freed from atoms and move through the crystal lattice.
  • Holes: are left behind when an electron moves. Holes are not real particles, but they behave like positively charged carriers because other electrons can move to fill them, making the hole appear to shift position.

By adding tiny amounts of impurities, semiconductors can be tuned to behave differently: an N-type semiconductor has an excess of electrons, while a P-type has an excess of holes.

The image shows two diagrams of semiconductor lattices. The top diagram is labeled 'P-Type Semiconductor' and consists of a grid of atoms each with a +4 charge, except for one atom labeled with a +3 charge. Between the +3 atom and a neighboring +4 atom, there is a missing electron labeled as 'Hole.' The bottom diagram is labeled 'N-Type Semiconductor' and also consists of a grid of atoms each with a +4 charge, except for one atom labeled with a +5 charge. An additional electron is shown as 'Free electron' near the +5 atom. Both diagrams include ovals representing 'Tightly bound electrons.' A legend at the bottom shows a filled circle labeled 'Atom' and an oval labeled 'Tightly bound electron.'
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When a P-type and an N-type semiconductor are joined together, they form a diode. At the junction between the two, electrons from the N-side and holes from the P-side combine, creating a thin depletion region with no mobile charge carriers. This region acts like a barrier to current flow.

The image shows a diagram of a semiconductor junction. On the left, there is a blue rectangle labeled 'P-type material' containing several grey circles labeled as 'Holes.' On the right, a pink rectangle labeled 'N-type material' contains several blue circles labeled as 'Free electrons.' Between these two regions is a narrow yellow band labeled 'Depletion region,' containing alternating '+' and '-' symbols. An arrow points from the P-type material to the N-type material with a diode symbol in between, indicating the direction of current flow. The text 'P-type material' and 'N-type material' are shown above the respective regions.
  • If you connect the diode so that the positive voltage is on the P-side and the negative voltage is on the N-side (forward bias), the external voltage reduces the barrier, allowing electrons and holes to move across the junction and current to flow.
  • If the diode is connected the other way around (in reverse bias), the barrier increases in size, and almost no current flows.

This one-way behaviour, which conducts in forward bias but blocks in reverse bias, is what makes diodes useful for controlling the direction of current in circuits.

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A transistor is an electronic component that can act as a switch or an amplifier. It controls the flow of electric current using tiny changes in voltage. Instead of relying on moving parts like a mechanical switch, it operates through changes in how charge flows through semiconductor materials.

Transistors are constructed from regions of P-type and N-type semiconductors that are joined together. These junctions create barriers that can either block or allow the flow of charge depending on the applied voltages. By adjusting these voltages, the transistor can turn current on or off, or allow a small signal to control a much larger one.

Transistors are the building blocks of modern electronics. They form logic gates in computer chips, amplify sound in speakers, and switch power in circuits. Billions of them are packed into a single integrated circuit, but they all work using the same basic idea: a small electrical control manages a larger current.

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A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of transistor that uses an electric field to control how easily current can flow through a semiconductor channel.

Below shows the circuit symbol for a MOSFET.

A diagram titled 'Symbol' depicting an electronic component symbol inside a blue circle. The symbol consists of three labeled lines: 'G (gate)' on the left, 'D (drain)' on the top right, and 'S (Source)' on the bottom right. An arrow points leftward from the middle line towards the gate. The image is marked with © Medify.

Its main body is made of P-type silicon, with two small N-type regions forming the source and drain.

The P-type channel prevents current flow when the MOSFET is switched off. Above this channel is the gate, a thin metal plate separated from the semiconductor by a very thin layer of silicon dioxide, which acts as an insulator.

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To switch on a MOSFET, an input current must flow from the gate to the source. The resistance of the gate oxide layer (typically silicon dioxide) is so high that no current flows through. The gate then becomes positively charged (like the positive plate of a capacitor), creating an electric field in the semiconductor channel.

  • The electric field attracts electrons from the N-type region towards the surface of the P-type region under the gate.
  • When the voltage between the gate and the source, is high enough, a conductive path, known as an N-type conducting channel, forms between the drain and the source, so current can flow between them.
  • The threshold voltage, where the n-type channel closes and the device switches off, is the gate–source voltage, . is generally between and
The image consists of two diagrams labeled (a) and (b) depicting MOSFET structures. 

(a) MOSFET structure: This diagram shows a cross-section of a MOSFET. The main components are labeled as follows: 'Source S' on the left, 'Gate G' in the middle, and 'Drain D' on the right. The structure includes 'Electrodes', an 'N-type' region, 'Gate oxide insulating layer', and a 'P-type' substrate. 

(b) MOSFET with positive gate potential: This diagram is similar to (a) but includes 'Positive potential G +' above the gate. The components are labeled 'S' for source, 'D' for drain, and 'N-type conducting channel' is shown forming between source and drain. The 'P-type' substrate is also labeled. 

The diagrams illustrate the basic structure and operation of a MOSFET with and without gate potential.

Because the MOSFET draws almost no current from the input circuit, it has a very high input resistance. This makes it highly energy efficient and ideal for use in integrated circuits and microchips.

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Question walkthrough

Explaining N-channel MOSFET operation

Explains why the insulated gate of an N-channel enhancement MOSFET draws no current, and how a positive gate voltage forms a conducting channel between source and drain to switch it on.

The input characteristic curve illustrates how the drain current changes as the gate–source voltage increases.

The image is a graph with the x-axis labeled V_GS/V and the y-axis labeled I_DS/mA. There is a plotted curve starting near the origin, increasing sharply after a certain point, and continuing to rise. A vertical dashed line is drawn from the x-axis at a point labeled V_GS(th) upward towards the curve. An annotation labeled I_DSS with an arrow points to the y-axis near the origin. The curve starts near zero on the x-axis and sharply rises after the vertical dashed line.

When is less than the threshold voltage almost no current flows. Once passes rises sharply as the MOSFET switches on.

The current that flows when is called the drain–source leakage

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The output characteristic curves of a MOSFET show how the drain current changes with the drain–source voltage for different values of gate–source voltage

The image shows a graph with the x-axis labeled as V_DS/V and the y-axis labeled as I_DS/mA. Several curves are plotted, all starting from the origin at 0 and extending upwards and to the right. Each curve represents a different V_GS value, with annotations indicating V_GS Increasing in an upward direction. The lowest curve is labeled V_GS = 0 V. An arrow pointing from the origin along the y-axis is labeled I_DSS.

Each curve on the graph represents a fixed value. As increases, more current can flow because the electric field at the gate widens the conductive channel between the drain and source.

The lowest curve (for ) shows the very small current that flows

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A MOSFET can act as an electronic switch, allowing a small logic signal to control a large current. In this circuit, a logic system controls the gate of the MOSFET.

The diagram shows an electronic circuit with various components and labels. On the left, there is a 'Logic system power supply' connected to an 'Input voltage'. Below it, a dashed box labeled 'Logic system' contains logic gates. To the right, a vertical line represents a MOSFET, with labels 'Gate', 'Source', and 'Drain'. The 'Gate' is connected to the logic system. The 'Source' is grounded at 0V. Above the 'Drain', a diode and coil are connected in series, leading to a 'Solenoid power supply voltage'. An arrow labeled 'I_DS' denotes current flow from the 'Drain'. Voltage labels 'V_GS' (Gate-source Voltage) and 'V_DS' (Drain Voltage) are indicated with arrows. At the bottom, definitions are given: I_DS = Drain Current, V_DS = Drain Voltage, V_GS = Gate-source Voltage. The diagram is © Medify.
  • When is greater than current flows from the drain to the source and powers the solenoid.
  • When is less than or equal to no current flows, and the solenoid turns off.

When the MOSFET switches off, the current in the solenoid coil suddenly stops. Because coils store energy in their magnetic fields, Lenz’s law tells us that the coil will oppose this change by inducing a voltage that tries to keep the current flowing. This voltage can be very large and may damage the MOSFET. The diode across the solenoid provides a safe path for the current to flow until the magnetic energy is released, thereby protecting the transistor.

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The gate of a MOSFET is insulated and draws almost no current, making it highly resistive. As a result, it can easily pick up a small electric charge from its surroundings. If the gate is left unconnected, stray charges can cause the MOSFET to switch on or off randomly.

To prevent this, a resistor, is connected between the gate and This provides a safe path for the charge to leak away, keeping the gate at a definite voltage when no input signal is present.

The value of is chosen to be large, approximately so that it keeps the gate stable without affecting the input signal.

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Question walkthrough

Finding voltage across a MOSFET switch

Uses the total series resistance to find the circuit current, then V=IR to find the small voltage drop across a fully-on MOSFET switching a motor.

A Zener diode is a type of diode designed to work in reverse. The circuit symbol for a Zener diode is illustrated below.

A schematic symbol of an electronic component, specifically a photodiode. The symbol consists of a triangle pointing to the right, with two lines extending horizontally from the triangle's base. A vertical line intersects the triangle's right side, splitting into two diagonal lines extending up and down. The image has the text © Medify below the symbol.

In a normal diode, current flows only when it is forward-biased, and reverse voltage stops the current. A Zener diode is designed so that when the reverse voltage reaches a certain threshold, called the Zener breakdown voltage, current starts flowing steadily in the reverse direction without damaging the diode.

This property makes it very useful for voltage regulation. As long as the current through the diode stays above a small minimum value, the voltage across it stays almost constant at This allows a Zener diode to act as a stable voltage reference in circuits.

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The I–V characteristic of a Zener diode looks similar to that of a normal diode in the forward bias direction. Both conduct once the forward voltage reaches approximately 0.3 to 0.7 V (for silicon diodes).

It is important to note that the primary difference is evident in reverse bias. For a normal diode, almost no current flows until the reverse breakdown voltage is reached, typically 50 to 400 V, which can permanently damage it.

The graph illustrates the voltage-current characteristics of a Zener diode. The horizontal axis is labeled 'Reverse bias' on the left and 'Forward bias' on the right. The vertical axis is labeled 'Reverse current.' The forward bias region is shaded on the right side of the graph, with an annotation indicating '0.3 to 0.7 V.' The reverse bias region is shaded on the left side, labeled 'Zener breakdown region' and 'Reverse current.' A section near the negative horizontal axis is labeled 'Zener breakdown voltage.' The curve shows a sharp increase in current in the forward bias region and a sharp increase in reverse current in the Zener breakdown region. The forward bias region is annotated with 'Forward bias region.'

A Zener diode, however, is designed so that reverse breakdown occurs safely at a much lower, controlled voltage known as the Zener breakdown voltage.

In this Zener breakdown region, the voltage across the diode remains nearly constant even as the current varies. This makes Zener diodes very useful for voltage regulation, reference circuits, and overvoltage protection.

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When a Zener diode is used as a voltage regulator, it is connected in reverse bias in series with a resistor.

  • When the input voltage is less than the Zener voltage, the current in the circuit is zero.
  • When the input voltage is greater than or equal to the current in the circuit is non-zero.

For a Zener diode, the voltage across it changes very little over a wide range of currents. Therefore, once the input voltage exceeds the voltage across the diode remains approximately constant.

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A load can be connected in parallel with the Zener diode (between the terminals in the diagram). Since the load shares the same two circuit points, it experiences the same constant voltage, allowing the Zener diode to maintain a steady load voltage even when the supply voltage varies.

The diagram shows an electrical circuit with a horizontal line representing a wire. On the top left of the circuit, there is a resistor symbol. The circuit also includes a diode symbol in the middle, with the cathode pointing upwards. Text labels are present: 'V_IN Input voltage' with an upward arrow on the left, and 'V_OUT Output (Reference) voltage' with an upward arrow on the right. The bottom of the circuit is labeled '0 V'.

The load resistance must be significantly higher than the dynamic resistance of the Zener diode, allowing the load to draw negligible current. This allows almost all the current to flow through the Zener diode, meaning the series resistor and Zener can be treated as a potential divider.

For the Zener diode to regulate properly, the current through it must be greater than the minimum Zener current, but not exceed the maximum rated value. This ensures the voltag across the diode and the load remains constant.

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Question walkthrough

Finding current through a Zener diode

Uses the voltage across the series resistor and Kirchhoff’s current law to find the current through a Zener diode in a voltage regulator circuit, given the load current.

A photodiode is a special type of p–n junction diode designed to convert light into electrical current.

  • When light strikes the junction, photons are absorbed and release charge carriers, creating a photocurrent.
  • This light-generated effect occurs in all p–n junctions, which is why normal diodes and transistors are sealed to keep out light.
  • In a photodiode, the junction is deliberately exposed using a transparent window or lens to capture light.

Below shows the circuit symbol for a photodiode:

A diagram of a photodiode symbol. It consists of a circle containing a triangle pointing to the right towards a vertical line. The circle is intersected by a horizontal line. Two arrows pointing towards the triangle are shown on the upper right side of the circle, indicating light. The diagram includes a copyright label '© Medify' below it.

A solar cell is simply a photodiode with a large exposed junction, or an array of junctions, designed to maximise light collection and electrical output.

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In a photodiode, the photocurrent increases with light intensity. The graph below shows how photocurrent varies with light intensity for a typical photodiode.

The graph shows a curve with 'Current / µA' on the vertical axis ranging from 0 to 800 with increments of 200, and 'Light intensity / lux' on the horizontal axis ranging from 0 to 6000 with increments of 1000. The curve starts near the origin, labeled as 'Dark current', and rises steeply, indicating an increase in current with light intensity. No plotted markers are visible. The curve does not pass through any specific data points explicitly marked on the graph.

Even in complete darkness, a very small current flows through the photodiode. This is the dark current, typically

The responsivity of a photodiode indicates the amount of current produced for a given light power. A common value is around Higher responsivity gives a greater electrical current for the same light power.

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Photodiodes can be used in two main modes: photovoltaic and photoconductive.

  • In photovoltaic mode, no external voltage is applied, and the photodiode generates a voltage in response to light. This is how solar cells operate.
  • In photoconductive mode, the photodiode is reverse-biased.
The image consists of a graph and two circuit diagrams. The graph is divided into two sections labeled 'Photoconductive mode' and 'Photovoltaic mode'. The x-axis is labeled 'Voltage V_D', and the y-axis is labeled 'I_D'. Three curves are present on the graph labeled 'Dark', 'Low light level', and 'High light level', indicating increasing current with light level. Below the graph, two circuit diagrams are shown. The left circuit includes a battery, a photodiode labeled 'I_D', and a resistor. The right circuit shows a photodiode labeled 'I_D' connected in series with a resistor. Arrows indicate light exposure on the photodiodes in both circuits. The image has a copyright label '© Medify'.

A reverse–bias voltage creates a stronger electric field across the p–n junction. This field pulls electrons and holes away from the junction, exposing more fixed ions. As a result, the depletion region widens, which improves the diode’s sensitivity and reduces its response time.

Photoconductive mode is commonly used because:

  • the photocurrent changes very linearly with light intensity,
  • sensitivity increases with reverse bias, and
  • the response time is much faster than in photovoltaic mode.
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Different photodiodes are designed to detect different wavelengths of light, from infrared to ultraviolet.

A spectral response curve illustrates the sensitivity of a device across its wavelength range.

A line graph titled 'Spectral response curve for infrared'. The x-axis is labeled 'Wavelength/ nm' with values ranging from 750 to 1150. The y-axis is labeled 'Relative spectral sensitivity' with values from 0.0 to 1.2. The graph shows a curve starting near (750, 0.0), peaking approximately at (900, 1.0), and then declining towards (1150, 0.0).

Infrared photodiodes are widely used in optical fibre receivers, where they detect the light pulses transmitted along the fibre. Their sensitivity and fast response make them ideal for high-speed communication systems.

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The Hall effect is the production of a small voltage across a current-carrying conductor or semiconductor when it is placed in a magnetic field.

A Hall-effect sensor, shown below, uses the Hall effect to detect a magnetic field.

A diagram featuring a central square with a cross inside it. The square is positioned at the intersection of two perpendicular lines extending outward horizontally and vertically. There is a copyright symbol followed by the text 'Medify' at the bottom of the image.

Inside the sensor, a thin semiconductor carries a steady current. When a magnetic field is present, the resulting Hall voltage is measured by the electronics in the device. This voltage changes in proportion to the magnitude and direction of the magnetic field.

Hall effect sensors are used to detect proximity, speed, and position by sensing magnetic fields, enabling a wide range of applications. Examples of this include:

  • automotive systems like anti-lock brakes and speedometers,
  • consumer electronics, such as brushless DC motor controllers, and
  • smartphone compasses (as hall effect sensors can be sensitive enough to detect the Earth’s magnetic field).
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A Hall effect sensor can detect the motion of a rotating part in an engine. A small magnet is attached to the rotating component.

Each time the magnet passes the sensor, the magnetic field at the sensor increases in strength. This produces a pulse of Hall voltage. The faster the component rotates, the more pulses per second the sensor produces. A Hall effect sensor for a vehicle is shown below:

Diagram illustrating the use of a Hall effect sensor in a rotating system. A large wheel is shown with a labeled 'Rotating component.' A small magnet is embedded in the rotating equipment near the outer edge of the wheel. A Hall effect sensor is positioned close to the magnet, with a line indicating it sends a 'Signal to engine management electronics.' The diagram includes arrows indicating the direction of rotation and the location of components. Text labels: 'Small magnet embedded in rotating equipment,' 'Hall effect sensor,' and 'Signal to engine management electronics.'

The stream of pulses is sent to the engine management electronics. By measuring the frequency of these pulses, the system can calculate the rotational speed.

This information is crucial for precisely controlling fuel injection, ignition timing, and other engine functions.

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The table below gives some advantages and disadvantages of Hall effect sensors.

A table with two columns labeled 'Advantages' and 'Disadvantages.' Under 'Advantages': 1. No moving parts - reliable. 2. Can operate at high rotational frequencies (up to 100 kHz). 3. Avoids contact bounce. 4. Not affected by moisture, dirt, or corrosion. 5. It can be used in areas where sparks must be avoided, e.g., inside fuel tanks. Under 'Disadvantages': 1. Limited accuracy at low magnetic fields due to noise. 2. Output voltage is sensitive to temperature changes. 3. Higher cost than simple mechanical switches. 4. Cannot operate without an external magnetic field source. E.g., if the magnet moves, then performance will decrease.
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Question walkthrough

Explaining Hall effect speed sensing

Explains how a Hall effect sensor detects a rotating magnet passing it once per revolution, producing a voltage pulse that is counted each second to determine rotational speed.